Introduction of new DRAM Generation: DDR3
When compared to the DDR2, the new generation, DDR3, delivers more advantages. First, it is equipped with the 8-bit prefetch design, with a computing speed of 800-1600MHz, which doubles the DDR2 using the 4-bit prefetch design with a computing speed of 400-800MHz. Second, the voltage of DDR3 is controlled at 1.5V, which saves more energy than the DDR2 at 1.8V. Third, the ASR (automatic self-refresh) design is applied to the DDR3 to lower the die temperature by reducing the refreshing frequency without sacrificing data transfer reliability. When comparing the DDR3-800, DDR3-1066 and DDR3-1333 with the DDR2-800, the average power consumption of the DDR3 modules is reduced by 25%, 29% and 40% respectively.
Comparison of DDR, DDR2, DDR3
| Model |
DDR |
DDR2 |
DDR3 |
| Data rate |
200 400Mbps |
400~800Mbps |
800~1333Mbps |
| Vdd / Vddq |
2.5V±0.2V |
1.8V±0.1V |
1.5V±0.075V |
| I/O Interface |
SSTL_2 |
SSTL_18 |
SSTL_15 |
| Package |
66TSOP2 60BGA |
60BGA for ×4 / ×8 84BGA for ×16 |
78BGA for ×4 / ×8 96BGA for ×16 |
| Burst Length |
2 / 4 / 8 |
4 / 8 |
4 / 8 |
| Prefetch |
2bit |
4bit |
8bit |
| # of bank |
4banks |
512Mb : 4banks 1Gb : 8banks |
512Mb ~8Gb: 8banks |
| Reset |
No |
No |
Yes |
| ODT |
No |
Yes |
Yes |
| Driver Calibration |
No |
Off-Chip Driver Calibration |
Self Calibration with ZQ Pin |
|