USA
 
ECC Registered DIMM DDR3-1066
ECC Registered DIMM DDR3-1066
 

1GB / 2GB / 4GB
 
Features

Introduction of new DRAM Generation: DDR3

When compared to the DDR2, the new generation, DDR3, delivers more advantages. First, it is equipped with the 8-bit prefetch design, with a computing speed of 800-1600MHz, which doubles the DDR2 using the 4-bit prefetch design with a computing speed of 400-800MHz. Second, the voltage of DDR3 is controlled at 1.5V, which saves more energy than the DDR2 at 1.8V. Third, the ASR (automatic self-refresh) design is applied to the DDR3 to lower the die temperature by reducing the refreshing frequency without sacrificing data transfer reliability. When comparing the DDR3-800, DDR3-1066 and DDR3-1333 with the DDR2-800, the average power consumption of the DDR3 modules is reduced by 25%, 29% and 40% respectively.


Comparison of DDR, DDR2, DDR3

Model DDR DDR2 DDR3
Data rate 200  400Mbps 400~800Mbps 800~1333Mbps
Vdd / Vddq 2.5V±0.2V 1.8V±0.1V 1.5V±0.075V
I/O Interface SSTL_2 SSTL_18 SSTL_15
Package 66TSOP2 60BGA 60BGA for ×4 / ×8
84BGA for ×16
78BGA for ×4 / ×8
96BGA for ×16
Burst Length 2 / 4 / 8 4 / 8 4 / 8
Prefetch 2bit 4bit 8bit
# of bank 4banks 512Mb : 4banks
1Gb : 8banks
512Mb ~8Gb: 8banks
Reset No No Yes
ODT No Yes Yes
Driver Calibration No Off-Chip Driver Calibration Self Calibration with ZQ Pin

 
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